Method of reducing leakage current in an integrated circuit

Details Method of reducing leakage current in an integrated circuit Method of reducing leakage current in an integrated circuit

1993-10-14

1995-05-16

Hearn, Brian

Fishing, trapping, and vermin destroying

437 22, 437234, 437905, 148DIG64, 148DIG135, H01L 3118

Patent

active

054160308

ABSTRACT:
A method is provided for reducing leakage current in an integrated circuit (24). A first doped region (18) having a first conductivity type is formed in a semiconductor layer (10) having a second conductivity type, such that a second doped region (20) having the first conductivity type is formed in the semiconductor layer (10). The second doped region (20) is less conductive than the first doped region (18). The first doped region (18) is removed from the semiconductor layer (10), such that the second doped region (20) substantially remains in the semiconductor layer (10). The integrated circuit (24) is formed to include the second doped region (20) and the semiconductor layer (10).

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