Substrate with thin film capacitor and insulating plug

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Patent

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Details

Other Related Categories

3613012, H01G 4228

Type

Patent

Status

active

Patent number

056526938

Description

ABSTRACT:
A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed in the bottom contact layer and is electrically isolated from remaining portions of the bottom contact layers by insulating plugs. A bottom contact metalization layer is applied to the surface of the bottom contact layers and the insulating plugs. A dielectric layer is formed on the surface of the bottom contact metalization layer. A ground metalization via and a power metalization via are formed at the surface of the dielectric layer. A sequence of top contact layers are applied to the surface of the dielectric layer and a front side ground terminal and front side power terminal are formed. A back side ground terminal and a back side power terminal are formed at the back side of the base substrate.

REFERENCES:
patent: 3683245 (1972-08-01), Bacher et al.
patent: 4549927 (1985-10-01), Goth et al.
patent: 4704368 (1987-11-01), Goth et al.
patent: 4731695 (1988-03-01), Brown et al.
patent: 5406446 (1995-04-01), Peters et al.
patent: 5479316 (1995-12-01), Smrtic et al.

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