Structure and method for making FETs and HEMTs insensitive to hy

Details Structure and method for making FETs and HEMTs insensitive to hy Structure and method for making FETs and HEMTs insensitive to hy

1995-09-22

1997-07-29

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257473, 257744, 257761, 257763, 437184, 437185, 437190, 437192, H01L 2947

Patent

active

056524447

ABSTRACT:
A structure and method for making HEMTs with a gate metal having a layer comprising titanium, a layer comprising vanadium over the layer comprising titanium, and a layer comprising gold over the layer comprising vanadium. Such HEMTs are insensitive to hydrogen.

REFERENCES:
patent: 5049954 (1991-09-01), Shimada et al.
"Hydrogen Effects On Reliability of GaAs MMICs", GaAs IC Symposium, William O. Camp, Jr., Randall Lasater, Vincent Genova, Robert Hume, pp. 203-206, 1989, IEEE.
"HEMT Degradation in Hydrogen Gas", P.C. Chao, M.Y. Kao, K. Nordheden, A.W. Swanson, IEEE Electron Device Letters, vol. 15, No. 5, May 1994.
Abstract for Japan Kokai Publication #59-132660 to Nagai, Abs. Pub. Nov. 1984, 1 Sheet.

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