Non-volatile semiconductor memory device capable of checking the

Details Non-volatile semiconductor memory device capable of checking the Non-volatile semiconductor memory device capable of checking the

1995-06-06

1996-04-30

Beausoliel, Jr., Robert W.

Excavating

365201, G11C 2900

Patent

active

055131930

ABSTRACT:
In collectively and electrically erasing a plurality of memory cells, to set the threshold values of the memory cells constant, electrons are previously stored in the floating gates of the memory cells. The memory cells whose floating gates are accumulated with electrons are electrically erased and the threshold value of each erased memory cell is checked. The collective erasing of the memory cells is repeated until the threshold values of all the memory cells become equal to or below a first value. When it is detected that the threshold values of the memory cells become equal to or below the first value, it is discriminated if those threshold values are equal to or above a second value smaller than the first value. When there is a memory cell whose threshold value is equal to or below a minimum value allowable based on the design, in the previous discrimination step, that memory cell is over-erased and the memory chip containing the memory cell is determined as a defect.

REFERENCES:
patent: 4460982 (1984-07-01), Gee et al.
patent: 4809231 (1989-02-01), Shannon et al.
patent: 4841482 (1989-06-01), Kreifels et al.
patent: 4862459 (1989-08-01), Fukushima
patent: 5052002 (1991-09-01), Tanagawa
patent: 5142495 (1992-08-01), Canepa
patent: 5220533 (1993-06-01), Turner
patent: 5268870 (1993-12-01), Harari
IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990, pp. 1147-1151, Seki et al., "An 80 ns 1 Mb Flash Memory with on Chip Erase/Erase-Verify Controller".
San et al "A New Technique for Determining the Capacitive Capling Coefficients in Flash EPROM's," IEEE Elec. Device letters vol. 13 No. 6 Jun. 1992.
Mehrotra et al "Serial 9Mb Flash EEPROM for Solid State Disk Applications" 1992 Symp. on VLSI Circuits Digest Tech. Papers.
V. Kynett et al., "A 90-ns One-Million Erase/Programe Cycle 1-Mbit Flash Memory", IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1259-1263.

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