Semiconductor structure for millimeter waves

Details Semiconductor structure for millimeter waves Semiconductor structure for millimeter waves

1977-05-02

1979-05-01

James, Andrew J.

357 55, 357 75, 357 71, 357 72, 357 81, H01L 2906, H01L 2348, H01L 2946

Patent

active

041527186

ABSTRACT:
A method for manufacturing semiconductor devices and the devices so made, having two components with differing internal structures of very small dimension on a common heat-dissipating support, wherein the two components are obtained by suitable ion implants in two separate regions of a single block of silicon by alternately protecting each region with a mask. After welding the structure to a metallic support, a pair of diodes or mounds is relieved by ion machining or chemical etching. The assembly is then insulated and provided with the necessary power connections by the alternate application of insulating and conductive materials, the latter being separate metallic layers enabling the two components to be discretely biased.

REFERENCES:
patent: 3447057 (1969-05-01), Brown et al.
patent: 3699402 (1972-10-01), McCann et al.
patent: 3867666 (1975-02-01), Nyul
patent: 3896473 (1975-07-01), DiLorenzo
patent: 3896478 (1975-07-01), Henry
patent: 4047197 (1977-09-01), Schierz

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