1978-01-16
1979-05-01
Wojciechowicz, Edward J.
357 22, 357 41, 357 42, 357 45, H01L 2972
Patent
active
041527143
ABSTRACT:
A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.
REFERENCES:
patent: 3783349 (1974-01-01), Beasom
patent: 4015278 (1977-03-01), Fukuta
Daughton James M.
Hendrickson Thomas E.
Honeywell Inc.
Neils Theodore F.
Wojciechowicz Edward J.
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