Thin film transistor having improved switching characteristic

Details Thin film transistor having improved switching characteristic Thin film transistor having improved switching characteristic

1995-10-26

1997-07-29

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437192, 437200, H01L 21265, H01L 2144, H01L 2148

Patent

active

056521596

ABSTRACT:
In a method of manufacturing a thin film transistor, a light shielding gate electrode is formed on a transparent insulating substrate. On the substrate including the gate electrode are laminated a gate insulating film, a semiconductor film, a protection insulating film, and a photoresist film. The photoresist film is patterned in alignment with the gate electrode. The protection insulating film is isotropically etched using the patterned photoresist film as a mask to have inclined portions. After the surface of the semiconductor film is rinsed to remove a natural oxide film, a metal film is deposited to form a metal silicide layer in alignment with the patterned protection insulating film. The metal film is patterned in such a manner that the metal portions are separated from the patterned protection insulating film. Next, ion implantation of impurity ions into the semiconductor film is performed using the first mask section as a mask such that the impurity ions pass through a part of the inclined portions and a part of the silicide layer, so that source and drain regions are formed to separate the metal silicide layer from a channel region to be formed under the patterned protection insulating film.

REFERENCES:
patent: 3707765 (1973-01-01), Coleman
patent: 4190850 (1980-02-01), Tihanyi et al.
patent: 4818715 (1989-04-01), Chao

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