Plasma etching method

Details Plasma etching method Plasma etching method

1984-09-10

1986-03-25

Paschall, M. H.

Electric heating

Metal heating

By arc

219121PG, 156345, 156646, 204298, 204192E, B23K 900, H01L 21306

Patent

active

045785597

ABSTRACT:
A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4342901 (1982-08-01), Zajac
patent: 4370196 (1983-01-01), Vossen, Jr. et al.
patent: 4373990 (1983-02-01), Porter
patent: 4380488 (1983-04-01), Reichelderfer et al.

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