Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1996-05-23

1997-07-29

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ER, C23C 1600

Patent

active

056518269

ABSTRACT:
A plasma processing apparatus is provided with a plasma generating mechanism including an electric discharge chamber and an annular antenna, a plasma diffusion chamber for diffusing plasma generated by the plasma generating mechanism for processing a substrate, a first temperature adjusting mechanism for adjusting the temperature of the plasma diffusion chamber, a magnetic field generating mechanism arranged around the plasma diffusion chamber to generate a magnetic field in the plasma diffusion chamber, an evacuating mechanism, a gas introducing mechanism, and a substrate holding mechanism. The magnetic field generating mechanism includes permanent magnets and a yoke, and a heat insulating portion is formed between the permanent magnets and the plasma diffusion chamber. A second temperature adjusting mechanism for adjusting the temperature of the permanent magnets is used. The temperature adjustment of the plasma diffusion chamber by the first temperature adjustment mechanism is independent of the temperature adjustment of the permanent magnets by the second temperature adjusting mechanism.

REFERENCES:
patent: 5079481 (1992-01-01), Moslehi
patent: 5082542 (1992-01-01), Moslehi
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5286297 (1994-02-01), Moslehi et al.
patent: 5290381 (1994-03-01), Nozawa et al.
patent: 5308417 (1994-05-01), Groechel et al.
patent: 5324360 (1994-06-01), Kozuka
patent: 5460684 (1995-10-01), Saeki et al.
patent: 5545258 (1996-08-01), Katayama et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-630742