Method of making dense vertical programmable read only memory ce

Details Method of making dense vertical programmable read only memory ce Method of making dense vertical programmable read only memory ce

1995-04-17

1996-04-30

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437967, 148DIG50, H01L 218247

Patent

active

055125050

ABSTRACT:
A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are formed vertically. This allows the density of the array to be increased since the amount of semiconductor substrate area occupied by each cell is decreased without having to sacrifice the amount or quality of the capacitive coupling. Further, a technique of forming capacitive coupling between the floating gate and an erase gate in a flash EEPROM array cell with improved endurance is disclosed.

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