Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-08-14

1990-05-15

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 357 16, 357 17, H01S 319

Patent

active

049264320

ABSTRACT:
A semiconductor laser device having a double heterojunction structure disposed on a current blocking layer which is disposed on a convex ridge includes a buffer layer having a conductivity-type opposite that of the current blocking layer disposed between the current blocking layer and the double heterojunction structure. A current injection groove in the ridge penetrates the current blocking and buffer layers so that the lower cladding layer of the double heterojunction structure contacts the ridge. Therefore, a thin active layer may be produced using the liquid phase epitaxy ridge effect. The pn junction between the current blocking layer and the lower cladding layer is stabilized by the intervening buffer layer.

REFERENCES:
"High Power CW . . . Laser Diodes", Electronics Letters, vol. 23, No. 13, pp. 672-673, Jun. 18, 1987.

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