MOSFET turn-on/off circuit

Details MOSFET turn-on/off circuit MOSFET turn-on/off circuit

Filed on

1989-01-23

Date issued

1989-10-31

Examiner

Miller, Stanley D.

Patent Class

Electrical transmission or interconnection systems

SubClass

Nonlinear reactor systems

SubSubClass

Parametrons

Other Related Categories

307570, 307270, 307246, 307584, H03K 17687

Type

Patent

Status

active

Patent number

048779822

Description

ABSTRACT:
A dual current source MOSFET turn-on/off circuit includes a high gain PNP transistor as a turn-off current source and a high gain NPN transistor as a turn-on current source for a P-channel MOSFET. A switch in the base circuit of the NPN transistor turns on the NPN transistor current source which overpowers the PNP transistor current source. The net current charges the MOSFET gate-to-source capacitance which, upon reaching a threshold voltage, turns the MOSFET on. When the switch is opened, the PNP transistor current source discharges the gate-to-source capacitance, turning off the MOSFET. The circuit provides almost constant power dissipation independent of input voltage and a constant turn-on/off time independent of input voltage.

REFERENCES:
patent: 4445055 (1984-04-01), Bete
patent: 4471245 (1984-09-01), Janutka
patent: 4677324 (1987-06-01), Ronan, Jr. et al.

Affiliated with

Also associated with

Rating

MOSFET turn-on/off circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET turn-on/off circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET turn-on/off circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-627670