Magnetic bubble memory with ion-implanted layer

Static information storage and retrieval – Magnetic bubbles – Guide structure

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365 32, G11C 1908

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043576834

ABSTRACT:
In ion-implanted bubble memories where a patterned ion-implanted layer defines the propagation paths and the special functional elements, a uniform additional ion implant layer provides for a high degree of control over the nucleation level in the bubble material. Design flexibility and high generator margins are achieved.

REFERENCES:
patent: 3792452 (1974-02-01), Dixon et al.
patent: 3914751 (1975-10-01), Keefe et al.
patent: 4070658 (1978-01-01), Giess et al.
AIP Conference Proceedings on Magnetism & Magnetic Materials, No. 24, Dec. 3-6, 1974, pp. 624-626.
Journal of Vacuum Science & Technology, vol. 15, No. 5, Sep./Oct. 1978, pp. 1675-1684.

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