Reverse conducting thyristor with specific resistor structures b

Details Reverse conducting thyristor with specific resistor structures b Reverse conducting thyristor with specific resistor structures b

1979-10-29

1982-11-02

Clawson, Jr., Joseph E.

357 20, 357 51, 357 86, H01L 29747

Patent

active

043576214

ABSTRACT:
A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of the second conductivity type formed on the first or anode electrode, a fifth region of the first conductivity type formed on the fourth region, and a second electrode formed on the fifth region and connected to the cathode electrode. The separate section includes a sixth region formed on the first electrode and of the first conductivity type, a seventh region formed on the sixth region and of the second conductivity type and an eighth region formed on the seventh region and of the first conductivity type. The resistance values of the semiconductor layers between the cathode electrode and the second electrode and between the cathode electrode and the auxiliary gate electrode are each 2 to 18 Ohms.

REFERENCES:
patent: 3408545 (1968-10-01), De Cecco et al.
patent: 3914783 (1975-10-01), Terasawa
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 4296427 (1981-10-01), Takeuchi et al.
J. Garrett, "The Evolution of a High-Power Fast-Switching Thyristor", Electrical Engineer, May 1971, vol. 48, #5, pp. 33-35.

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