Pin junction photovoltaic element with P or N-type semiconductor

Details Pin junction photovoltaic element with P or N-type semiconductor Pin junction photovoltaic element with P or N-type semiconductor

1988-11-18

1990-05-15

James, Andrew J.

357 2, 357 11, 357 58, 357 59, 357 61, H01L 4500

Patent

active

049262297

ABSTRACT:
An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

REFERENCES:
patent: 4292461 (1981-09-01), Hovel
patent: 4433202 (1984-02-01), Maruyama
Bleicher, "Group II-VI Compounds in Optoelectronics" Funk-Technik, vol. 31, No. 20, pp. 644-645, 648, 649, 652, Oct. 1976.

Affiliated with

Also associated with

Rating

Pin junction photovoltaic element with P or N-type semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pin junction photovoltaic element with P or N-type semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pin junction photovoltaic element with P or N-type semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-624854