Method for making a complementary silicon gate MOS structure

Details Method for making a complementary silicon gate MOS structure Method for making a complementary silicon gate MOS structure

1977-07-15

1979-05-01

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, 148188, 357 42, 357 59, H01L 21225

Patent

active

041516354

ABSTRACT:
Complementary silicon gate MOS structure formed of a semiconductor body of silicon having a major surface with a first region of N conductivity type formed in the body and extending to the surface and a second region of P conductivity type formed in the body and extending to the surface. A P-channel MOS device is formed in the first region and an N-channel MOS device is formed in the second region to provide complementary devices in the body. Each of the P and N-channel devices has a polycrystalline gate structure in which the polycrystalline material is doped with a P-type impurity to make possible the matching of threshold voltages of both devices.
In the method, complementary MOS devices are formed by the use of two separate etching operations on the polycrystalline material and forming relatively thick layers of silicon type material on the semiconductor body in separate operations.

REFERENCES:
patent: 3646665 (1972-03-01), Kim
patent: 3673471 (1972-06-01), Klein
patent: 3699646 (1972-10-01), Vadasz

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