Semiconductor device having a disordered superlattice

Details Semiconductor device having a disordered superlattice Semiconductor device having a disordered superlattice

1990-10-18

1991-07-09

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

050311859

ABSTRACT:
A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a nondisordered region which can serve as a resonator in a laser.

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