Method of forming electrical contact to a semiconductor substrat

Details Method of forming electrical contact to a semiconductor substrat Method of forming electrical contact to a semiconductor substrat

1984-05-15

1986-03-25

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 148 15, 148187, 148DIG140, 357 91, 427 88, H01L 2128, H01L 21265, C23F 102

Patent

active

045773963

ABSTRACT:
A silicide layer or silicon alloy layer is formed within a surface region of an impurity-doped region on the surface of a semiconductor substrate by implanting and heating any of those metals which can form silicides or silicon alloys with silicon upon heating.
The peel of a metallic electrode or wiring can thus be prevented, and the electrode or wiring can be directly formed on the semiconductor substrate.

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Nagasawa et al., Jap. Jour. Appl. Phys. 22 (1983) p. L-57.
Crowder et al., IEEE-Trans. Electron Device, ED26 (1979) 369.

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