Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1990-12-03

1991-07-09

Carroll, J.

357 239, 357 54, 357 59, 357 60, H02L 2968, H02L 2906, H02L 2934, H02L 2904

Patent

active

050310100

ABSTRACT:
In a semiconductor memory device having a floating gate structure, the floating gate electrode is composed of 2 to 10 silicon grains. With the floating gate electrode, the insulation film, formed on the floating gate electrode, can have a high breakdown voltage. In a method of manufacturing a semiconductor memory device having a floating gate structure, an insulation film is formed on the silicon substrate, portions of the insulation film which are on the drain and source forming regions of the silicon substrate are removed, and a silicon layer is formed on the silicon substrate by an epitaxial growth process, constituting a floating gate, composed of 2 to 10 silicon grains. According to the manufacturing method, the insulation film formed on the floating gate electrode can have a high breakdown voltage.

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