Method for making a doped well in a semiconductor substrate

Details Method for making a doped well in a semiconductor substrate Method for making a doped well in a semiconductor substrate

1988-03-17

1990-05-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 57, 437 70, 437 38, 437 72, 148DIG70, 357 42, 357 91, H01L 21265, H01L 2170

Patent

active

049258060

ABSTRACT:
A method for making a dopant well in a semiconductor substrate, wherein a dopant is implanted directly into an exposed surface of a semiconductor substrate through an opening in a dopant-absorbing coating and the substrate is heated to drive the implanted dopant further into the substrate. The method requires fewer steps than the conventional method, and is particularly applicable in the fabrication of CMOS devices.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 3921283 (1975-11-01), Shappir
patent: 3962717 (1976-06-01), O'Brien
patent: 4027380 (1977-06-01), Deal et al.
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4135955 (1979-01-01), Gasner et al.
patent: 4161417 (1979-07-01), Yim et al.
patent: 4244752 (1981-01-01), Henderson, Sr. et al.
patent: 4268321 (1981-05-01), Meguro
patent: 4295266 (1981-10-01), Hsu
patent: 4306916 (1981-12-01), Wollesen et al.
patent: 4346512 (1982-08-01), Liang et al.
patent: 4381956 (1983-05-01), Lane
patent: 4409726 (1983-10-01), Shiota
patent: 4412375 (1983-11-01), Matthews
patent: 4412378 (1983-11-01), Shinada
patent: 4420872 (1983-12-01), Solo de Zaldivar
patent: 4426766 (1984-01-01), Lee
patent: 4434543 (1984-03-01), Schwabe
patent: 4435895 (1984-03-01), Parrillo et al.
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4444605 (1984-04-01), Slawinski
patent: 4459741 (1984-07-01), Schwabe
patent: 4466171 (1984-08-01), Jochems
patent: 4516316 (1985-05-01), Haskell
patent: 4535532 (1985-08-01), Lancaster
patent: 4536945 (1985-08-01), Gray et al.
patent: 4549340 (1985-10-01), Nagasawa et al.
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4556585 (1985-12-01), Abernathey et al.
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4567640 (1986-02-01), Fang et al.
patent: 4573257 (1986-03-01), Hulsewek
patent: 4574467 (1986-03-01), Halfacre et al.
patent: 4600445 (1986-07-01), Horr et al.
patent: 4613885 (1986-09-01), Haken
patent: 4626450 (1986-12-01), Tani et al.
patent: 4637128 (1987-01-01), Mizutani
patent: 4662061 (1987-05-01), Malhi
patent: 4694565 (1987-09-01), Custode
patent: 4697332 (1987-10-01), Joy et al.
patent: 4713329 (1987-12-01), Fang et al.
patent: 4732869 (1988-03-01), van Attekun et al.
patent: 4749662 (1988-06-01), Custode
patent: 4761384 (1988-08-01), Neppl et al.
patent: 4767721 (1988-08-01), Liao et al.
Ghandhi, VLSI Fabrication Principles, New York: John Wiley & Sons, Inc., 1983, pp. 214-216, 542-548.
Wolf et al., Silicon Processing For The VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 407-458.

Affiliated with

Also associated with

Rating

Method for making a doped well in a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a doped well in a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a doped well in a semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-621433