Sucking electrode for shortening the turn-off time in a semicond

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357 34, 357 39, H01L 2974

Patent

active

050033670

ABSTRACT:
A sucking electrode for shortening the turn-off time in a semiconductor component includes a diffusion zone of the sucking electrode, a zone adjoining the diffusion zone of the sucking electrode defining a junction therebetween, and a metal short-circuit disposed between the diffusion zone of the sucking electrode and the zone adjoining the diffusion zone of the sucking electrode. The diffusion zone of the sucking electrode is disposed inside the zone adjoining the diffusion zone of the sucking electrode. At least a portion of the junction between the diffusion zone of the sucking electrode and the zone adjoining the diffusion zone of the sucking electrode is free of metal plating.

REFERENCES:
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patent: 4205332 (1980-05-01), Conti et al.
patent: 4504847 (1985-03-01), Nishizawa
patent: 4516149 (1985-05-01), Wakui et al.
patent: 4543593 (1985-09-01), Fujita
patent: 4607273 (1986-08-01), Sakurada et al.
patent: 4635086 (1987-01-01), Miwa et al.
patent: 4646122 (1987-02-01), Kimura et al.
patent: 4713679 (1987-12-01), Terasawa et al.
IEEE Electron Device Letters, vol. EDL. 6, No. 11, Nov. 1985 (J. Narain) pp. 578, 579; "A Novel Method of Reducing the Storage Time of Transistors".

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