1987-06-01
1990-06-12
Larkins, William D.
357 239, 357 55, 357 59, H01L 2704
Patent
active
049337378
ABSTRACT:
A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.
REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 3600651 (1971-08-01), Duncan
patent: 3664896 (1972-05-01), Duncan
patent: 3740276 (1973-06-01), Bean
patent: 3764413 (1973-10-01), Kakizaki et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4157269 (1979-06-01), Ning
patent: 4396933 (1983-08-01), Magdo
patent: 4499657 (1985-02-01), Ooga et al.
patent: 4546538 (1985-10-01), Suzuki
patent: 4782030 (1988-11-01), Katsumota
Wieder, IBM Tech. Discl. Bull., vol. 21, No. 8, Jan. 1979, pp. 3166-3169.
IEEE Trans. on Ports Hybrids & Packaging, vol. PHP10, No. 4, Dec. 1974, pp. 221-229.
Davies et al., IEEE J. of Solid State Circuits, vol. SC 12, No. 4, Aug. 1977, pp. 367-375.
Appels et al., "Local Oxidation of Silicon . . . ", Philips Research Reports, vol. 25, pp. 118-132, (1970).
Chang, IBM Tech. Discl. Bulletin, vol. 21, No. 7, Dec. 1978, pp. 2761-2762.
Imaizumi Ichiro
Kawamura Masao
Miyazaki Takao
Nagata Minoru
Nakamura Tohru
Hitachi , Ltd.
Larkins William D.
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