Programmable read-only memory

Details Programmable read-only memory Programmable read-only memory

1989-03-10

1990-06-12

Larkins, William D.

357 13, 357 51, 357 86, H01L 2704, G11C 1140

Patent

active

049337360

ABSTRACT:
A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22) fully adjoining a recessed oxide insulating region (16). A composite buried layer consisting of buried regions (32) which adjoin the insulating region below the lower cell regions (20) and an opposite-conductivity buried web (44) which laterally surrounds each buried region is employed to improve programming efficiency. Connective regions (46) extend from the buried web to the upper semiconductor surface to contact electrical leads (54) typically arranged in a parallel pattern. The maximum dopant concentration in the intermediate cell regions occurs vertically within 20% of their mid-points.

REFERENCES:
patent: 4155778 (1979-05-01), Antipov
patent: 4624046 (1986-11-01), Shideler et al.
patent: 4692787 (1987-09-01), Possley et al.
Kooi et al., "Selective Oxidation . . . ", Semiconductor Silicon 1973, (Electrochemical Society, Princeton, N.J., 1973), pp. 860-879.

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