High speed photodetector having dual transmission line geometry

Details High speed photodetector having dual transmission line geometry High speed photodetector having dual transmission line geometry

Filed on

1988-10-31

Date issued

1990-06-12

Examiner

Nelms, David C.

Patent Class

Radiant energy

SubClass

Photocells; circuits and apparatus

SubSubClass

Photocell controlled circuit

Other Related Categories

357 30, H01J 4014

Type

Patent

Status

active

Patent number

049335421

Description

ABSTRACT:
A vacuum photodetector has been fabricated in a coplanar microstrip transmission line geometry to achieve high quantum efficiency and picosecond response time. The coplanar microstrip transmission lines, photocathode and anode, are mounted on an insulating substrate such as sapphire and are electrically biased with respect to each other. Photodetection occurs by classical photoelectric emission as a result of impinging photon energies exceeding the work function of the photocathode.

REFERENCES:
patent: 3917943 (1975-11-01), Auston
patent: 3947681 (1976-03-01), Javan
patent: 4127784 (1978-11-01), Proud, Jr. et al.
patent: 4326126 (1982-04-01), Auston
patent: 4376285 (1983-03-01), Leonberger et al.
patent: 4482863 (1984-11-01), Auston et al.
patent: 4525871 (1985-06-01), Foyt et al.
patent: 4703996 (1987-11-01), Glass et al.
Picosecond Optoelectronic Devices, edited by C. H. Lee, 1984, pp. 274-277.
Applied Physics Lett., "An Amorphous Silicon Photodetector for Picosecond Pulses", D. H. Auston et al., 36 (1), Jan. 1980.
Applied Physics Lett., "Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors", D. H. Auston et al., 37(4), Aug. 1980, p. 371.
Applied Physics Lett., "Picosecond Photoconductivity in Radiation-Damaged Silicon-on-Sapphire Films", P. R. Smith et al., 38(1), Jan. 1981, pp. 47-50.
Applied Physics Lett., "Picosecond Optical Electronic Sampling: Characterization of High-Speed Photodetectors", D. H. Auston et al., 41(7), Oct. 1982, pp. 599-601.
Applied Physics Lett., "High Quantum Efficiency Amorphous Silicon Photodetectors with Picosecond Response Times", 44(4), Feb. 1984, pp. 450-452.
Applied Physics Lett., "Subpicosecond Optoelectronic Study of Resistive and Superconductive Transmission Lines", W. J. Gallagher et al., 50(6), Feb. 1987, pp. 350-351.
Applied Physics Lett., "Generation of Subpicosecond Electrical Pulses on Coplanar Transmission Lines", M. B. Ketchen et al., 48(12), Mar. 1986, pp. 751-753.
Applied Physics Lett., "Far Infrared Spectroscopy with Subpicosecond Electrical Pulses on Transmission Lines", R. Sprik et al., 51(7), Aug. 1987, pp. 548-551.
IEEE Trans. on Magnetics, "Subpicosecond Optoelectronic Study of Superconducting Transmission Lines", C. C. Chi et al., vol. MAG-23, No. 2, Mar. 1987, pp. 1666-1669.
IEEE Journal of Quantum Electronics, "Capacitance Free Generation and Detection of Subpicosecond Electrical Pulses on Coplanar Transmission Lines", D. R. Grischkowsky et al., vol. 24, No. 2, Feb. 1988, pp. 221-225.

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