Thermoelectric infrared detector array

Details Thermoelectric infrared detector array Thermoelectric infrared detector array

1983-05-31

1985-12-10

Sikes, William L.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136213, 136225, 250338, 357 28, 357 32, H01L 3532

Patent

active

045583420

ABSTRACT:
The detecting element of a thermoelectric infrared detector consists of p-n junctions of a thermopile which are located on a thin layer of unsupported silicon dioxide. The silicon dioxide spans an opening which extends through a silicon semiconductor substrate. The reference junctions of the thermopile are located above the silicon substrate. The detecting p-n junctions on the thin silicon dioxide above the opening in the substrate have a low heat capacity and respond rapidly to temperature changes, whereas the reference junctions above the thick substrate have a much higher heat capacity and tend to maintain their ambient temperature. The conduction of heat between the detecting p-n junctions and the reference junctions is limited by the thin insulating layer of silicon dioxide which joins the detecting p-n junctions to the substrate under the reference junctions.

REFERENCES:
patent: 4111717 (1978-09-01), Baxter
Lahiji et al., "A Batch-Fabricated Silicon Thermopile Infrared Detector", Jan. 1982, pp. 14-22, IEEE Transaction on Electron Devices, vol. ED-29, No. 1.

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