Method of making self-aligned tungsten interconnection in an int

Details Method of making self-aligned tungsten interconnection in an int Method of making self-aligned tungsten interconnection in an int

1989-07-25

1990-06-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437192, 437195, 437944, H01L 2144, H01L 2148

Patent

active

049333038

ABSTRACT:
A process is disclosed for making a self-aligned metal (preferably tungsten) connection in an integrated circuit. A contact hole formed in a first dielectric layer on a substrate is filled with metal, after which the first dielectric layer and the metal-filled contact hole are covered with a second dielectric layer. A photoresist layer is formed over the second dielectric layer and is patterned. A trench is formed in the exposed second dielectric layer and a thin layer of silicon or a metal such as tungsten is then sputtered or evaporated to form a layer of the silicon or metal on the upper surface of the patterned photoresist and the bottom and side walls of the trench. The patterned photoresist is removed and the trench is filled with metal.

REFERENCES:
patent: 4283439 (1981-08-01), Higashinakagawa et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4822749 (1989-04-01), Flanner et al.

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