System for improving the uniformness of patterns generated by el

Details System for improving the uniformness of patterns generated by el System for improving the uniformness of patterns generated by el

Filed on

1982-10-19

Date issued

1985-02-19

Examiner

Anderson, Bruce C.

Patent Class

Radiant energy

SubClass

Irradiation of objects or material

SubSubClass

Irradiation of semiconductor devices

Other Related Categories

250397, G01N 2300

Type

Patent

Status

active

Patent number

045007900

Description

ABSTRACT:
A system to improve the uniformness of patterns for LSI circuits or masks generated in an electron beam lithographic system uses a backscatter indicator signal to vary a control signal for the beam stepping rate proportional to the variations in the amount of backscattered electrons. This avoids non-uniformity such as line width variations which otherwise occur when the pattern to be generated covers border lines between two different substrate or base layer materials. Range setting circuitry is provided for adjusting, during an initial prescan of a sample of two materials having an extreme difference in their backscatter characteristic, the offset and the gain for the backscatter detector. During subsequent exposure of a wafer, the backscatter indicator signal and thus the stepping rate control signal variations remain within preselected limits.

REFERENCES:
patent: 3711711 (1973-01-01), Dao et al.
patent: 3778626 (1973-12-01), Robertson
patent: 3854071 (1974-12-01), Heritage et al.
patent: 3922546 (1975-11-01), Livesay
patent: 4021675 (1977-05-01), Shifrin
patent: 4056730 (1977-11-01), Davis
"Electron Beam Lith. for Complex High Density Devices", Chang et al., Electron and Ion Beam Science and Tech., Sixth Int. Conf., 1974, pp. 581-583.
"Registration Mark Detection for Electron-Beam Lithography-El1-Syst.", Davis, IBM J. Res. Develope, vol. 24, No. 5, Sep. 1980, pp. 545-553.
"Practical Scanning Electron Microscopy", Goldstein et al., Plenum Press, New York 1975, pp. 96-97.

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