Semiconductor laser device having plural active regions

Details Semiconductor laser device having plural active regions Semiconductor laser device having plural active regions

1980-06-13

1982-03-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 50, H01S 319

Patent

active

043180590

ABSTRACT:
A monolithically integrated semiconductor laser device capable of producing a plurality of light beams different in wavelength from each other.

REFERENCES:
patent: 4277759 (1981-07-01), Tanaka et al.
patent: 4280108 (1981-07-01), Scifres et al.
patent: 4280131 (1981-07-01), Ono et al.
Namizaki, "Transverse-Junction-Stripe Lasers with a GaAs p-n Homojunction", IEEE J. of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 427-431.
Aiki et al., "Frequency Multiplexing Light Source with Monolithically Integrated Distributed-Feedback Diode Lasers", APL, vol. 29, No. 8, 15 Oct. 1976, pp. 506-508.
Panish, "Phase Equilibria in the System Al-Ga-As-Sn and Electrical Properties of Sn-Doped Liquid Phase Epitaxial Al.sub.x Ga.sub.1-x As", J. Appl. Phys., vol. 44, No. 6, Jun. 1973, pp. 2667-2675.

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