Magnetron sputtering devices

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

204192R, C23C 1500

Patent

active

042396115

ABSTRACT:
A magnetically enhanced sputtering device including first magnet means for establishing a magnetic field where the lines of force thereof extend over and may pass through the cathode sputtering surface at one predetermined area thereof. The first magnet means may be disposed on the side of the cathode opposite the sputtering surface where the flux therein may be substantially parallel to or inclined with respect to the sputtering surface. Second magnet means are preferably included in the path of the flux projected from the first magnet means so that the second magnet means not only contributes to the magnetic field formed over the sputtering surface, but it also blocks flux from extending below the first magnet means to thereby enhance the strength of the field formed over the first magnet means. Various embodiments are disclosed for effecting the foregoing.
Also disclosed is a sputtering device, which may use the foregoing magnetically enhanced sputtering techniques, where a plurality of different target materials may be sputtered in a predetermined sequence.

REFERENCES:
patent: 3853740 (1974-12-01), Kunz
patent: 3864239 (1975-02-01), Fletcher
patent: 3985635 (1976-10-01), Adam et al.
patent: 4060470 (1977-11-01), Clarke

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