Method of manufacturing a field-effect transistor

Details Method of manufacturing a field-effect transistor Method of manufacturing a field-effect transistor

1983-08-10

1985-02-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 148 15, 357 22, H01L 21467, H01L 2976

Patent

active

044996519

ABSTRACT:
In a method for the manufacture of a field-effect transistor comprising a substrate and an epitaxial layer located thereon, a V-shaped trench extending from the surface of the epitaxial layer through the epitaxial layer into the substrate is made and a zone is created by implantation in an area located in front of the V-shaped trench.

REFERENCES:
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4105475 (1978-08-01), Jenne
patent: 4116720 (1978-09-01), Vinsow
patent: 4157610 (1979-06-01), Kamei et al.
Kohn, "V-Shaped Gate GaAs MESFET for Improved High Frequency Performance",Electronics Letters, vol. 11, No. 8, Apr. 1975.

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