Seal structure for an integrated circuit

Details Seal structure for an integrated circuit Seal structure for an integrated circuit

1986-05-07

1988-08-16

James, Andrew J.

357 48, 357 50, 357 52, 357 53, 357 65, H01L 2704, H01L 2348

Patent

active

047648007

ABSTRACT:
A seal structure for a semiconductor integrated circuit is disclosed. Contacts within and outside the region encircled by the seal structure are coupled by running a doped semiconductor region under the encircling seal. A reverse biased junction is formed at the interface of the seal and underlying doped semiconductor region. The best mode disclosed is related to sealing fuse components from the remainder of the circuit components while providing electrical coupling ability.

REFERENCES:
patent: 3443176 (1969-05-01), Agusta et al.
patent: 3659162 (1972-04-01), Toshio et al.
patent: 4035823 (1977-07-01), Marshall
patent: 4365264 (1982-12-01), Mukai et al.
patent: 4583109 (1986-04-01), Goetz
patent: 4656055 (1987-04-01), Dwyer

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