Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-07-15
1977-11-01
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148175, 204 38A, 2041293, 357 53, 357 56, H01L 2120
Patent
active
040564150
ABSTRACT:
An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and a portion of the epitaxial growth are removed in selected isolation regions to expose the semiconductive material. A dielectric is formed by anodizing the N-type semiconductive material in the selected isolation regions to provide electrical isolation between the remaining portions of the epitaxial growth. Base and emitter elements are formed in the conventional manner to complete the integrated circuit which is thereafter packaged.
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Cook Jr. Charles R.
Scherrer Raymond E.
U Aung San
International Telephone and Telegraph Corporation
O'Halloran John T.
Ozaki G.
Van Der Sluys Peter C.
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