Semiconductor sense circuit suitable for buffer circuit in semic

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307475, 307355, 307605, 365205, 365207, 365196, H03K 1704, H03K 17687, H03K 1901, H03K 3356

Patent

active

047646934

ABSTRACT:
A sense circuit for use in a semiconductor memory senses an input signal by comparing the input signal with a reference voltage. The sense circuit comprises a sense amplifier having first and second nodes, and first and second transfer gates. The first transfer gate couples the input signal to the first node of the sense amplifier. The second transfer gate couples the reference voltage to the second node of the sense amplifier. A level-shift circuit is provided between the second node of the sense amplifier and the second transfer gate. In response to the voltage level of the input signal latched in the first node, the level-shift circuit shifts the level of the reference voltage latched in the second node of the sense amplifier to a lower level when the input signal is high in voltage level, and shifts it to a higher level when the input signal is low in voltage level.

REFERENCES:
patent: 4150441 (1979-04-01), Ando
patent: 4165541 (1979-08-01), Varshney et al.
patent: 4397000 (1983-08-01), Nagami
patent: 4645954 (1987-02-01), Schuster

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