Method of fabricating an integrated circuit containing bipolar a

Details Method of fabricating an integrated circuit containing bipolar a Method of fabricating an integrated circuit containing bipolar a

1987-11-23

1988-08-16

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 31, 437 41, 437 59, H01L 21425

Patent

active

047644826

ABSTRACT:
A method for fabricating an integrated circuit including at least one metal-oxide-semiconductor transistor (MOS) and at least one bipolar transistor is disclosed. The pocket regions used to reduce the short channel effect in the MOS transistor are formed simultaneously with the base region for the bipolar transistor.

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S. Ogura, IEDM, Tech. Dig., "A Half Micron MOSFET Using Double Implanted LDD", San Francisco, Calif., Dec. 13-15, 1982, pp. 718-721.

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