Patent
1987-10-02
1988-07-19
Clawson, Jr., Joseph E.
357 20, 357 234, 357 2312, 357 2314, 357 36, 357 43, 357 68, 357 86, H01L 2974
Patent
active
047588713
ABSTRACT:
A thyristor comprising a semiconductor body which has a plurality of emitter zones formed by parts of a first electrode, a first base adjacent to the emitter zones, an emitter contacted by a second electrode, and a second base adjacent to the emitter and adjacent to the first base. Emitter shorts which are controllable via MIS field effect transistors of the depletion type are positioned at the edge side relative to the emitter zones. It is an objective to obtain thyristors of this type that are usable despite some fault locations. This is achieved by combining the emitter zones into a plurality of groups which have group-associated control terminals for the MIS-FETs. Only the control terminals of the functional groups are connected to a collective contact carrying a control voltage. The control terminals of the fault-affected groups are not connected thereto so that the latter groups are functionally suppressed.
REFERENCES:
patent: 4224634 (1980-09-01), Svedberg
patent: 4454527 (1984-06-01), Patalong
patent: 4466010 (1984-08-01), Patalong
patent: 4639762 (1987-01-01), Neilson et al.
Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
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