Fishing – trapping – and vermin destroying
Patent
1987-03-19
1988-07-19
Ozaki, George T.
Fishing, trapping, and vermin destroying
437 16, 437904, H01L 21385
Patent
active
047585374
ABSTRACT:
A subsurface zener diode is formed in an N type semiconductor substrate such as the kind employed in the epitaxial layer found in silicon monolithic PN junction isolated integrated circuits. A P+ anode is ion implanted into and diffused from an oxide source and an N++ cathode is diffused within the confines of the anode. The cathode is surrounded with a counter-doped region that forces the PN junction breakdown subsurface. The resulting diode has a clean, sharp breakdown curve and the breakdown voltage can be tailored by controlling the anode deposition.
REFERENCES:
patent: 3607449 (1971-09-01), Tokuyama et al.
patent: 3704178 (1972-11-01), Hill
patent: 3881179 (1975-04-01), Howard, Jr.
patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4119440 (1978-10-01), Hile
patent: 4127859 (1978-11-01), Nelson
patent: 4136349 (1979-01-01), Tsang
patent: 4155777 (1979-05-01), Dunkley et al.
patent: 4177095 (1979-12-01), Nelson
patent: 4213806 (1980-07-01), Tsang
patent: 4484206 (1984-11-01), Moroshima et al.
patent: 4672403 (1987-06-01), Jennings
Grebene, Analog Integrated Circuit Design, Van Nostrand Reinhold Co., N.Y., N.Y., pp. 7, 10-12, 1972.
Lui et al., IEEE J. Solid-State Circuits, "An Ion-Implanted Subsurface Monolithic Zener Diode", vol. SC-14, No. 4, Aug. 1979, pp. 782-784.
National Semiconductor Corporation
Ozaki George T.
Woodward Gail W.
LandOfFree
Lateral subsurface zener diode making process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral subsurface zener diode making process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral subsurface zener diode making process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-597202