Doubly-self-aligned hole-within-a-hole structure in semiconducto

Details Doubly-self-aligned hole-within-a-hole structure in semiconducto Doubly-self-aligned hole-within-a-hole structure in semiconducto

1986-12-08

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 73, 437 89, 437238, H01L 2176

Patent

active

047585307

ABSTRACT:
A method of fabricating a self-aligned hole-within-a-hole structure which resolves the smaller hole at small dimensions by using a single photolithography step to define the two holes, the step being performed on a planar surface. The method comprises fabricating a block on a substrate having the dimension of the smaller hole, fabricating a sidewall spacer on the block such that the spacer and the block have the dimension of the larger hole, growing a first layer surrounding the sidewall spacer, removing the sidewall spacer, growing a second layer surrounding the block which is thinner than the first layer, and removing the block.

REFERENCES:
patent: 4292156 (1981-09-01), Matsumato et al.
patent: 4361600 (1982-11-01), Brown
patent: 4583281 (1986-04-01), Ghezza et al.
patent: 4635344 (1987-01-01), Havemann
patent: 4657630 (1987-04-01), Agatsuma

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