Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1977-03-29

1977-12-20

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

148188, B01J 1700

Patent

active

040639010

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed, in which a polycrystalline silicon layer is formed over a semiconductor substrate coated with an insulating layer with a window and a first kind of impurity is doped to a first predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate. Then a peripheral of the doped portion of the polycrystalline silicon layer is converted into an insulator, and a second kind of impurity is doped into a second predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate, thereby providing electrode wiring paths including the first and second predetermined portions.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan

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