Method for forming dummy pattern in a semiconductor device

Fishing – trapping – and vermin destroying

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437250, 437195, 364488, 364491, H01L 2170, H01L 2700

Patent

active

054590930

ABSTRACT:
Method of forming a dummy pattern without inducing crosstalk between conductive interconnects which would normally be caused by increase in capacitance between the interconnects. Also, absolute steps of devices are made uniform. Furthermore, the flatness of devices is improved. In a device having a multilayer aluminum metallization structure, let Chip be data about a region on which a dummy pattern should be defined. Let I.sub.Mi be data about a region occupied by an aluminum interconnect pattern on the ith layer. Let I.sub.Di be data about a dummy pattern on the ith layer, or data sought for. Let (Chip-I.sub.Mi).sub.D be data about the dummy pattern region obtained by decrement of data. The data (Chip-I.sub.Mi).sub.D about the dummy pattern region is ANDed with data I.sub.M(i+1) about the conduction pattern on the (i+1)th layer or with data I.sub.D(i+1) about the dummy pattern. Thus, data I.sub.Di about the dummy pattern is created. The dummy pattern on the ith layer is created, based on the created data I.sub.Di.

REFERENCES:
patent: 5032890 (1991-07-01), Ushiku et al.
patent: 5278105 (1994-01-01), Eden et al.

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