Metal via sidewall tilt angle implant for SOG

Details Metal via sidewall tilt angle implant for SOG Metal via sidewall tilt angle implant for SOG

1994-11-07

1995-10-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437231, 437240, 437978, 437195, H01L 21469, H01L 21265

Patent

active

054590868

ABSTRACT:
A new method of forming the dielectric layer of an integrated circuit is described. A thick insulating layer is formed over semiconductor device structures in and on a semiconductor substrate. A first metal layer is deposited over the thick insulating layer. The first metal layer is etched using conventional photolithography and etching techniques to form the desired metal pattern on the surface of the thick insulating layer. The intermetal dielectric layer is formed by first covering the patterned first metal layer with a layer of silicon oxide. The silicon oxide layer is covered with a layer of spin-on-glass material which is baked and cured. A second layer of silicon oxide completes the intermetal dielectric layer. Via openings are formed through the intermetal dielectric layer to the underlying patterned first metal layer. A large tilt-angle implant is made into the sidewalls of the via openings to transform the exposed spin-on-glass layer so that it will not absorb moisture from the atmosphere thereby preventing outgassing from the intermetal dielectric layer, and thus preventing poisoned via metallurgy. A second metal layer is deposited overlying the intermetal dielectric layer and within the via openings and fabrication of the integrated circuit is completed.

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"Modification Effects in Ion-Implanted SiO.sub.2 Spin-on-Glass" by N. Moriya, Y. Shacham-Diamond, and R. Kalish, J. Electrochem Soc. vol. 140, No. 5, May 1993, pp. 1442-1449.

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