Method of flattening the surface of a semiconductor device by po

Details Method of flattening the surface of a semiconductor device by po Method of flattening the surface of a semiconductor device by po

1995-05-18

1997-07-01

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

1566361, 216 38, 216 88, H01L 21304

Patent

active

056438370

ABSTRACT:
A Si.sub.3 N.sub.4 film is formed as a protective film over a BPSG film. The film thickness of the Si.sub.3 N.sub.4 film is determined by the relation of the working rate of the BPSG film to the working rate of the Si.sub.3 N.sub.4 film and the height of the convex portions on the surface of the BPSG film. The Si.sub.3 N.sub.4 film formed over the convex portions is then removed over areas slightly larger than the convex portions such that the film does not overlie the convex portions. When the silicon substrate is subsequently polished through the use of colloidal silica slurry, the convex portions can be selectively removed by polishing while the surface of the BPSG film is protected by the Si.sub.3 N.sub.4 film.

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