Method for making ohmic contact to lightly doped islands from a

Details Method for making ohmic contact to lightly doped islands from a Method for making ohmic contact to lightly doped islands from a

1994-11-09

1997-07-01

Quach, T. N.

Fishing, trapping, and vermin destroying

437160, 437200, 148DIG12, 148DIG135, H01L 21283, H01L 21225

Patent

active

056438214

ABSTRACT:
A buried silicide layer 111 in a bonded wafer 105 makes ohmic contact to a heavily doped buried layer 125. A dopant rapidly diffuses through the silicide layer and into the adjacent semiconductor to form the buried layer.

REFERENCES:
patent: 4794445 (1988-12-01), Homma et al.
patent: 4826787 (1989-05-01), Muto et al.
patent: 4839309 (1989-06-01), Easter et al.
patent: 4948748 (1990-08-01), Kitahara et al.
patent: 5098861 (1992-03-01), Blackstone
Wolf, Silicon Processing, Lattice Press, vol. 2, 1990, pp. 498-500.

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