Method of making contact electrodes to silicon gate, and source

Details Method of making contact electrodes to silicon gate, and source Method of making contact electrodes to silicon gate, and source

1985-07-19

1988-02-23

Roy, Upendra

Fishing, trapping, and vermin destroying

357 15, 357 67, 357 91, 437 39, 437 89, 437170, 437200, H01L 21265, H01L 2972, C23F 102

Patent

active

RE0326135

ABSTRACT:
In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate (13) and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers (19, 21, 18) on the source and drain regions (10.1, 10.2) as well as the silicon gate electrode (13).

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