Process for producing an electrostatically deformable thin silic

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29580, 29610SG, 148175, 148187, 148188, 148189, 156628, 156648, 156657, 156662, 338 2, 338 4, 357 4, 357 26, 357 55, 357 60, H01L 21223, H01L 21225, H01L 21306, H01L 2906

Patent

active

042343615

ABSTRACT:
The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements. A processing technique is disclosed which is particularly adapted to forming membranes in silicon substrates in a manner which is compatible with the construction thereon of other integrated circuit components. The process involves a short and concentrated deposition diffusion of boron into one of the surfaces of the substrate, followed by rapid and substantially oxygen and water vapor free transfer of the substrate to a drive furnace which is oxygen and water vapor free in which diffusion to a preselected depth takes place over a controlled period of time.

REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3440873 (1969-04-01), Eichelberger
patent: 3614678 (1971-10-01), Engeler et al.
patent: 3634727 (1972-01-01), Poyle
patent: 3676231 (1972-07-01), Medvecky et al.
patent: 3697918 (1972-10-01), Orth et al.
patent: 3721593 (1973-03-01), Hays et al.
patent: 3751314 (1973-08-01), Rankel
patent: 3758830 (1973-09-01), Jackson
patent: 3806382 (1974-04-01), Fitzgibbons et al.
patent: 3814998 (1974-06-01), Thoma
patent: 3826865 (1974-07-01), Quate et al.
patent: 3886584 (1975-05-01), Cook et al.
patent: 3900811 (1975-08-01), Kurtz et al.
patent: 3918019 (1975-11-01), Nunn
patent: 3929528 (1975-12-01), Davidson et al.
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 3944732 (1976-03-01), Kino
patent: 3949246 (1976-04-01), Lohrmann
patent: 3952234 (1976-04-01), Birchall
patent: 3966515 (1976-06-01), Guthrie
patent: 4103273 (1978-07-01), Keller
Greenwood, J. C., "Ethylene Diamine-Catechol-Water---Etching of p-n Junction", J. Electrochem. Soc., vol. 116, No. 9, Sep. 1969, pp. 1325-1326.
Smith et al., "X-Ray Lithography---Electron Beam---", J. Vac. Science Technology, vol. 10, No. 6, Nov./Dec., 1973, pp. 913-917.
Schmidt et al., "Preparation of Thin Windows in Silicon---Lithography", J. Applied Physics, vol. 46, No. 9, Sep. 1975, pp. 4080-4082.
Huang et al., "Schottky Diodes---on Thin Silicon Membranes". IEEE Trans. on Electron Devices, vol. ED-23, No. 6, Jun. 1976, pp. 579-583.
Huang et al., "Single-Crystal Silicon-Barrier Josephson Junctions", IEEE Trans. on Magnetics, vol. Mag-11, No. 2, Mar. 1975, pp. 766-769.
Moore et al., "Auger Investigation of Boron-Doped SiO.sub.2 /Li", J. Vac. Sci. Tech., vol. 14, No. 1, Jan./Feb. 1977, pp. 70-74.
Finne et al., "Water-Amine---System for Etching Silicon", J. Electrochem. Soc., vol. 114, No. 9, Sep. 1967, pp. 965-970.
Bohg, A., "Ethylene Diamine---Boron-Doped Silicon", J. Electrochem. Soc., vol. 118, No. 2, Feb. 1971, pp. 401-402.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing an electrostatically deformable thin silic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing an electrostatically deformable thin silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing an electrostatically deformable thin silic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-596405

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.