Protective integrated circuit device utilizing back-to-back zene

Details Protective integrated circuit device utilizing back-to-back zene Protective integrated circuit device utilizing back-to-back zene

1981-02-04

1983-09-20

Davie, James W.

357 46, H01L 2990

Patent

active

044059337

ABSTRACT:
A semiconductor device utilized in a monolithic integrated circuit for protection against large voltage transients comprises back-to-back zener diodes formed by two separate regions of one type conductivity extending through an epitaxial layer of the opposite type conductivity and contacting a buried pocket of the opposite type conductivity to form PN junctions therewith. In the preferred embodiment, one of the one-type-conductivity regions completely surrounds the other region of one type conductivity.

REFERENCES:
patent: 3441815 (1969-04-01), Pollock et al.
patent: 3881179 (1975-04-01), Howard
patent: 3982263 (1976-09-01), Dobkin
patent: 4127859 (1978-11-01), Nelson

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