Mercury containment for liquid phase growth of mercury cadmium t

Details Mercury containment for liquid phase growth of mercury cadmium t Mercury containment for liquid phase growth of mercury cadmium t

1980-07-18

1982-03-02

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 118415, H01L 21208

Patent

active

043176895

ABSTRACT:
Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.

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