Integrated multiple quantum well photonic and electronic devices

Details Integrated multiple quantum well photonic and electronic devices Integrated multiple quantum well photonic and electronic devices

1988-04-22

1989-11-28

Mintel, William A.

357 4, 357 30, 357 16, 357 22, 357 40, 357 41, 357 19, H01L 2912

Patent

active

048841196

ABSTRACT:
In an optoelectronic integrated circuit, an electronic device is integrated with an optical device by fabricating the electronic device directly in a doped semiconductor layer of the optical device. The optical devices contemplated for use include at least a region of multiple low-doped or intrinsic quantum well layers; electronic devices include bipolar and field-effect transistors. Resulting integrated circuits exhibit a high degree of planarity.

REFERENCES:
patent: 4216485 (1980-08-01), Page
patent: 4327962 (1982-05-01), Reisman
patent: 4384447 (1984-03-01), Copeland, III et al.
patent: 4546244 (1985-10-01), Miller
patent: 4692207 (1987-09-01), Bouadma et al.
patent: 4701774 (1987-10-01), McIlroy et al.
Chen et al., "Vertical Integration of an InGaAsP/InP Heterojunction Bipolar Transistor and a Double Heterostructure Laser," Appl. Phys, Lett, 50 (14), Apr. 6, 1987, pp. 874-876.
Abeles et al., "Integration of GaAs MESFET Drivers with GaAs Directional-Coupler Electro-Optic Modulators, " Electronics Letters, Sep. 24, 1987, vol. 23, No. 20, 1037-1038.
Choi et al., "Monolithic Integration of GaAs/AlGaAs Double-Heterostructure Led's and Si MOSFET's," IEEE Electron Device Letters, vol. EDL-7, No. 9, Sep. 1986, pp. 500-502, (cont'd from previous page).
Wake et al., "Monolithically Integrated InGaAs/InP PIN-JFET Photoreceiver," Electronics Letters, Jun. 19, 1986, vol. 22, No. 13, pp. 719-720.
Yamaroshi et al., "AlGaAs/GaAs Multi Quantum-Well (MQW) Laser Applied to Monolithic Integration with FET Driver," Electronics Letters, Nov. 24, 1983, No. 24, vol. 19, 1020-1021.
Zipperian t al., "A GaAs/In.sub.25 Ga.sub.75 As/GaAs Modulation-bo Peb, Single, Strained Quantum-Well FET," Inst. Phys, Conf. Ser, No. 79; Chap. 78, Int. Symp. GaAs and Related Compounds, Karuiza, Japan, 1985, pp. 421-425, (cont'd from previous page).
Esakiet et al., "Ion Beam Growth Method," IBM Technical Disclosure Bulletin, vol. 12, No. 12, May 1970, p. 2134.
Electronics Letters, vol. 23, No. 20, Sep. 1987, "Integration of GaAs MESFIT Drivers with GaAs Directional-Coupler Electro-Optic Modulators" by J. H. Abeles et al., pp. 1037-1038.
IEEE Electron Device Letters, vol. EDL-7, No. 9, Sep. 1986, "Monolithic Integration of GaAs/AlGaAs Double-Heterostructure LED's and Si MOSFET's", by H. K. Choi et al., pp. 500-502.
Electronics Letters, vol. 19, Nov. 1983, "AlGaAs/GaAs Multiquantum-Well (MQW) Laser Applied to Monolithic Integration with FET Driver", by S. Yamakoshi et al., pp. 1020-1021.
Electronics Letters, vol. 23, No. 23, Nov. 5, 1987, "Dynamic Response of an Integratd Optoelectronic Logic Device", by P. Wheatley et al., pp. 1249-1250.
Appl. Phys. Lett., 50 (14), Apr. 6, 1987, "Vertical Integration of an InGaAsP/InP Heterojunction Bipolar Transistor and a Double Heterostructure Laser", by T. R. Chen et al., pp. 874-876.
Proceedings of the IEEE International Semiconductor Lasers Conference, Kanazawa, Japan, Oct. 1986, "Monolithic Integration of DFB Lasers and MQW Optical Modulators", by Y. Kawamura et al.

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