Process for deposition of borophosphosilicate glass

Details Process for deposition of borophosphosilicate glass Process for deposition of borophosphosilicate glass

1984-05-18

1985-12-10

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427 85, 427 95, 427 99, 4272553, 427314, C23C 1100, C23C 1300

Patent

active

045579504

ABSTRACT:
A process for chemical vapor deposition of borophosphosilicate glass on a silicon wafer at reduced pressure is disclosed herein. The process includes a step of placing a silicon wafer within a reactor tube. The reactor tube is evacuated to a pressure of less than 500 millitorr and is heated to a temperature of not less than 350.degree. C. and not greater than 500.degree. C. A mixture of silane, phosphine and boron trichloride gases is flowed into the reactor tube so that the mixture contacts the silicon wafer. At the same time, a quantity of oxygen is flowed into the reactor tube so that the oxygen also contacts the silicon wafer and intermixes and reacts with the silane, phosphine and boron trichloride gases to form layers of borophosphosilicate glass on the silicon wafer.

REFERENCES:
patent: 3481781 (1969-12-01), Kern
patent: 4098923 (1978-07-01), Alberti et al.
patent: 4191603 (1980-03-01), Garbarino et al.
patent: 4253417 (1981-03-01), Valentijn
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4376796 (1983-03-01), Arrasmith et al.
patent: 4394401 (1983-07-01), Shioya et al.
patent: 4409424 (1983-10-01), Devaud
patent: 4433008 (1984-02-01), Schnable et al.
Kern et al., "Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications", RCA Review, vol. 43, pp. 423-457, Sep. 1982.

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