One-time-programmable EEPROM cell

Details One-time-programmable EEPROM cell One-time-programmable EEPROM cell

1992-06-18

1994-02-01

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365104, G11C 1602

Patent

active

052837599

ABSTRACT:
The invention relates to a one-time-programmable read-only memory cell, abbreviated as PROM. According to the prior art, PROM cells are programmed by the deliberate destruction of a component. Since the information is burnt into the memory cell in this way, a PROM cell can only be programmed once. If read-only memory cells are to be electrically programmed and cleared several times, floating gate transistors in particular are used. With the floating gate transistor, the information is stored as a charge on a completely insulated gate electrode. If PROM and EEPROM memory cells are now integrated on a common chip, this requires additional circuitry due to the different voltage requirements of the two different memory cells. In accordance with the invention, a repeatedly electrically programmable read-only memory is connected such that it can only be electrically programmed once.

REFERENCES:
patent: 4811287 (1989-03-01), Kupersmith et al.
patent: 4878199 (1989-10-01), Mitzutani
patent: 4975878 (1990-12-01), Boddu et al.
patent: 5170373 (1992-12-01), Doyle et al.
patent: 5185718 (1993-02-01), Rinerson et al.
Elektronik Notizen: "`Plastik-EPROMs` sollen ROMs ablosen"; Elektronik 24, Nov. 29, 1985.
IEEE Journal of Solid-State Circuits, vol. SC-20, No. 5, Oct. 1985; "A 25-ns 16K CMOS PROM Using . . . ", S. Pathak et al.

Affiliated with

Also associated with

Rating

One-time-programmable EEPROM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One-time-programmable EEPROM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One-time-programmable EEPROM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-584524