Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-05-13
1983-09-20
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 148 15, 357 49, 357 55, H01L 2195
Patent
active
044047355
ABSTRACT:
A method for forming a field isolation structure for a semiconductor device, in which a groove is formed in a semiconductor substrate, an insulating layer is formed on the substrate at least in the groove, a glass layer or a silicon layer is formed thereon, and thereafter a high energy beam such as a laser beam is irradiated onto the glass or silicon layer to selectively heat the same thereby to melt or fluidify the layer and let the same flow into the groove is disclosed. A smooth and flat surface is obtained through the above melting process, which also prevents electrical breaks in wiring layers formed thereon. The method is particularly suited to producing small field isolation structures thus improving the integration density of the device.
REFERENCES:
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4284659 (1981-08-01), Joccodine et al.
Fujitsu Limited
Rutledge L. Dewayne
Schiavelli Alan E.
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